Kim Kyung-ryun, Vice President of DRAM Development at Samsung Electronics, introduces zHBM. (Source: Samsung Electronics) Samsung Electronics unveiled next-generation 3D memory technologies, including z-axis High Bandwidth Memory (zHBM) and zNAND-O, as the company seeks to strengthen its position in the rapidly growing artificial intelligence market. Samsung on Aug. 5 showcased mockups of zHBM and zNAND-O for the first time at the Future of Memory and Storage (FMS) 2026 conference in California....